elektronische bauelemente SMS4003K 0.5 a, 30v n-channel mosfet 10-jan-2010 rev. a page 1 of 4 1 2 3 gate source drain * * gate pretection diode top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen & lead-free features low gate voltage threshold v gs(th) to facilitate drive circuit design low gate charge for fast switching esd protected gate minimum breakdown voltage rating of 30v application level shifters level switches low side load switches portable applications device marking: tr8 maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain C source voltage v ds 30 v gate C source voltage v gs 20 v t a =25c 0.5 continuous drain current 1 , steady state t a =85c i d 0.37 a power dissipation 1 , steady state p d 0.69 w t a =25c 0.56 continuous drain current 1 , t<10s t a =85c i d 0.40 a power dissipation 1 , t<5s p d 0.83 w pulsed drain current i dm 1.7 a steady state 1 180 t<10s 1 150 maximum junction C ambient steady state 2 r ja 300 c/w operating junction & storage temperature range t j , t stg 150, -55~150 c source current (body diode) i s 1.0 a lead temperature for soldering purposes(1/8 from case 10s t l 260 c note: 1. surface-mounted on fr4 board using 1 in sq pad s ize (cu area=1.127 in sq 1 oz including traces). 2. surface-mounted on fr4 board using the minimum r ecommended pad size. sot-23 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente SMS4003K 0.5 a, 30v n-channel mosfet 10-jan-2010 rev. a page 2 of 4 electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition static caracteristics drain-source breakdown voltage v (br)dss 30 - - v v gs =0v, i d =100 a gate-source threshold voltage 3 v gs(th) 0.8 - 1.6 v v ds = v gs, i d =250 a gate-source leakage current i gss - - 1.0 a v gs =10v zero gate voltage drain current i dss - - 1.0 a v ds =30v, v gs =0v, t j =25c - 1.5 2.0 v gs =2.5v, i d =10ma drain-source on-resistance 3 r ds(on) - 1.0 1.5 v gs =4.0v, i d =10ma forward transconductance 3 g fs - 0.33 - s v ds =3v, i d =10ma dynamic characteristics input capacitance c iss - 21 - output capacitance c oss - 19.7 - reverse transfer capacitance c rss - 8.1 - pf v ds =5v v gs =0v f=1mhz switching characteristics turn-on delay time 4 t d(on) - 16.7 - rise time 4 t r - 47.9 - turn-off delay time 4 t d(off) - 65.1 - fall time 4 t f - 64.2 - ns v gs =4.5v v dd =5v i d =0.1a r g =50 total gate charge q g - 1.15 - threshold gate charge q g(th) - 0.15 - gate-source charge q gs - 0.32 - gate-drain charge q gd - 0.23 - nc v gs =5v v ds =24v i d =0.1a source-drain diode caracteristics t j =25c - 0.65 0.7 forward on voltage t j =125c v sd - 0.45 - v v gs =0v i s =10ma reverse recovery time t rr - 14 - ns v gs =0v, i s =10ma, dls/dt=8a / s note: 3. pulse test: pulse width Q 300 s, duty cycle Q 2%. 4. switching characteristics are independent of ope rating junction temperatures.
elektronische bauelemente SMS4003K 0.5 a, 30v n-channel mosfet 10-jan-2010 rev. a page 3 of 4 characteristic curves
elektronische bauelemente SMS4003K 0.5 a, 30v n-channel mosfet 10-jan-2010 rev. a page 4 of 4 characteristic curves
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